[2] SHEN S C. Comparison and competition between MCT and QW structure material for use in IR detectors[J]. Microelectronics Journal.1994,25(8):713-739.
[3] FU Y, WILLANDER M, JIANG J, et al. Photocurrents of 14 mu m quantum-well infrared photodetectors[J]. Journal of Applied Physics.2003,93(12):9432-9436.
[6] FU Ying, LI Ning, Karlsteen M. Thermoexcited and photoexcited carrier transports in a GaAs/AlGaAs quantum well infrared photodetector[J]. Journal of Applied Physics.2000,87(1):511-516.
[7] LI N, XIONG D Y, YANG X F. Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors[J]. Applied Physics.A,Materials Science &Processing.2007,89(3):701-705.
[8] HE M D, LIU J Q, CHEN X S.Light transmission through metallic two-dimensional arrays of compound coaxial structures with central and annular apertures:A charge oscillation picture[J]. Journal of Applied Physics.2009,106(11352911).
[9] TREDICUCCI A, GMACHL C, CAPASSO F. Single-mode surface-plasmon laser[J]. Applied Physics Letters.2000,76(16):2164-2166.
[10] PILLAI S, CATCHPOLE K R, TRUPKE T, et al. Surface plasmon enhanced silicon solar cells[J]. Journal of Applied Physics.2007,101(9 Part 1):93101-93105.
[11] CHANG Chi-Yang, CHANG Hsu-Yu, CHEN Chia-Yi, et al. Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays[J]. Applied Physics Letters.2007,91(16):163101-163107.
[12] WU Wei, Bonakdar A, Mohseni H. Plasmonic enhanced quantum well infrared photodetector with high detectivity[J]. Applied physics letters.2010,96(16):161101-161107.
[13] ZHANG Y M, CHEN H B, LI Z F, et al. The optical coupling improvement of THz quantum well infrared photodetectors based on the plasmonic induced near-field effect[J]. PHYSICA B-CONDENSED MATTER.2010,405(2):552-554.
[14] WANG J A, CHEN X S, LI Z F, et al. Study of grating performance for quantum well photodetectors[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS.2010,27(11):2428-2432.