• Infrared and Laser Engineering
  • Vol. 35, Issue 4, 432 (2006)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 文 卤嗪牛 /strong>1007-2276(2006)04-0432-05[J]. Infrared and Laser Engineering, 2006, 35(4): 432 Copy Citation Text show less
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    [2] HU Y,SOLERE J L,LACHARTRE D,et al.Design and performance of a low-noise,low-power consumption CMOS charge amplifier for capactive detectors[J].IEEE Transactions on Nuclear Science,1998,45(1):119-123.

    [3] TEDJA S,van der SPIEGEL J,WILLIAMS H H.A CMOS lownoise and low-power charge sampling integrated circuit for capacitive detector/sensor interfaces[J].IEEE Journal of Solid-State Circuits,1995,30(2):110-119.

    [4] HU Y,DEPTUCH G,TRCHETTA R,et al.A low-noise,low-power CMOS SOI readout front -end for silicon detectors leakage current compensation with capability[J].IEEE Transactions on Circuits and Systems-Ⅰ:Fundamental Theory and Applications,2001,48(8):1022-1030.

    [5] RANDAZZO N,RUSSO G V,PRESTI D L,et al.A four-channel,low-power CMOS charge preamplifier for silicon detectors with medium value of capacitance[J].IEEE Transactions on Nuclear Science,1997,44(1):31-35.

    [6] BAKER R J,LI H W,BOYCE D E.CMOS Circuit Design,Layout,and Simulation[M].New York:John Wiley,1998.

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    [8] GUO C,SCHMITT P,DEPTUCH G,et al.A fully integrated,low noise and low power BiCMOS front-end readout system for capacitive detectors[J].International Journal on Analog Integrated Circuits and Signal Processing,2001,28(3):211-223.

    [9] WURTZ L T,WHELESS W P Jr.Design of a high-performance,low noise charge preamplifier[J].IEEE Trans Circuits Syst Ⅰ,1993,40(8):541-545.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 文 卤嗪牛 /strong>1007-2276(2006)04-0432-05[J]. Infrared and Laser Engineering, 2006, 35(4): 432
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