[1] IMADA M, FUJIMORI A, TOKURA Y. Metal-insulator transitions ［J］. Reviews of Modern Phys, 1998, 70(4): 1039-1263.
[2] SZOT K, SPEIER W, BIHLMAYER G, et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 ［J］. Nature Mater, 2006, 5(4): 312-320.
[3] MEIJER G I, STAUB U, JANOUSCH M, et al. Valence states of Cr and the insulator-to-metal transition in Cr-doped SrTiO3 ［J］. Phys Review B, 2005, 72(15): 155102.
[4] WASER R. Redox-based resistive switching memories ［J］. J Nanosci & Nanotechnol, 2012, 12(10): 7628-7640.
[5] WANG Y H, ZHAO K H, SHI X L, et al. Investigation of the resistance switching in Au/SrTiO3:Nb heterojunctions ［J］. Applied Phys Lett, 2013, 103(3): 031601.
[6] BUZIO R, GERBI A, GADALETA A, et al. Modulation of resistance switching in Au/Nb:SrTiO3 Schottky junctions by ambient oxygen ［J］. Applied Phys Lett, 2012, 101(24): 243505.
[7] SZOT K, DITTMANN R, SPEIER W, et al. Nanoscale resistive switching in SrTiO3 thin films ［J］. Physica Status Solidi, 2007, 1(2): 86-88.
[8] WASER R, DITTMANN R, STAIKOV G, et al. Redox based resistive switching memories-nanoionic mechanisms, prospects and challenges ［J］. Advanc Mater, 2009, 21(25-26): 2632-2663.
[9] GUO X. Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO3 ［J］. Applied Phys Lett, 2012, 101(15): 042107.
[10] CHEN X G, MA X B, YANG Y B, et al. Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3 ［J］. Applied Phys Lett, 2011, 98(12): 122102.
[11] ZHANG P, MENG Y, LIU Z, et al. Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline ［J］. J Applied Phys, 2012, 111(6): 063702.
[12] SAWA A. Resistive switching in transition metal oxides ［J］. Mater Today, 2008, 11(6): 28-36.
[13] GOOSSENS A S, DAS A, BANERJEEY T. Electric field driven memristive behavior at the Schottky interface of Nb- doped SrTiO3 ［J］. J Applied Phys, 2018, 124(15): 152102.
[14] FANG R, VELO Y G, CHEN W, et al. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory ［J］. Applied Phys Lett, 2014, 104(18): 183507.
[15] HUGHART D R, LOHN A J, MICKEL P R, et al. A comparison of the radiation response of TaOx and TiO2 memristors ［J］. IEEE Trans Nucl Sci, 2013, 60(6): 4512-4519.
[16] BARNABY H J, MALLEY S, LAND M, et al. Impact of alpha particles on the electrical characteristics of TiO2 memristors ［J］. IEEE Trans Nucl Sci, 2013, 60(6): 4512-4519.
[17] DEIONNO E, LOOPER M D, OSBORN J V, et al. Radiation effects studies on thin film TiO2 memristor devices ［C］// IEEE Aerospace Conf. Big Sky, MT, USA. 2013: 1-8.
