Analysis of Thermal Characteristic in Optically Pumped Semiconductor Vertical-External-Cavity Surface-Emitting Laser with Double Heatspreaders

Liu Xiangnan; Wang Xiaohua; Wang Fei; Wang Jinyan; Zhou Huang; Liu Pengfei; Jin Guangyong

doi:10.3788/lop48.091404

[1] He Chunfeng, Li Jun, Qin Li et al.. Spectral analysis of OPS-VECSEL ［J］. Infrared Laser Eng., 2007, 13(3): 97～99

[2] Hua Lingling, Song Yanrong, Zhang Peng et al.. Study on the gain characteristics of optically pumped semiconductor laser ［J］. Acta Optica Sinica, 2010, 30(6): 1702～1708

[3] J. Chilla, S. Butterworth, A. Zeitschel et al.. High power optically pumped semiconductor lasers ［C］. SPIE, 2004, 5332: 143～150

[4] Chen Baizhong, Dai Teli, Liang Yiping et al.. Finite element analysis of thermal management in optical pumping semiconductor vertical-external cavity surface-emitting laser ［J］. Chinese J. Lasers, 2009, 36(10): 2745～2750

[5] Z. L. Liau. Semiconductor wafer bonding via liquid capillarity ［J］. Appl. Phys. Lett., 2000, 77(5): 651～653

[6] J. V. Moloney, A. R. Zakharian, J. Hader et al.. Designing new classes of high power, high brightness VECSELs ［C］. SPIE, 2005, 5990: 599003

[7] W. J. Alford, T. D. Raymond, A. A. Allerman. High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser ［J］. J. Opt. Soc. Am. B, 2002, 19(4): 663～666

[8] H. Lindberg, M. Strassner, E. Gerster et al.. Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers ［J］. IEEE J. Sel. Top. Quantum Electron., 2005, 11(5): 1126～1134

[9] W. Nakwaski. Thermal conductivity of binary, ternary, and quaternary III-V compounds ［J］. J. Appl. Phys., 1988, 64(1): 159～166

[10] A. J. Kemp, G. J. Valentine, Jon-Mark Hopkins et al.. Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach ［J］. IEEE J. Quantum Electron., 2005, 41(2): 148～155

[11] A. J. Kemp, John-Mark Hopkins, A. J. Maclean et al.. Thermal management in 2.3-μm semiconductor disk lasers: a finite element analysis ［J］. IEEE J. Quantum Electron., 2008, 44(2): 125～135

[12] M. Kuznetsov, F. Hakimi, R. Sprague et al.. Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams ［J］. IEEE J. Sel. Top. Quantum Electron., 1999, 5(3): 561～573

[13] Yiying Lai, J. M. Yarborough, Yushi Kaneda et al.. 340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs ［J］. IEEE Photon. Technol. Lett., 2010, 22(16): 1253～1255

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