[1] Jiang Huilin, Tong Shoufeng. The Technologies and Systems of Space Laser Communication [M]. Beijing: National Defence Industry Press, 2010. 211-214.
[2] A H Johnston, T F Miyahira, B G Rax. Proton damage in advanced laser diodes[J]. IEEE Trans on Nuclear Science, 2001, 48(6): 1764-1772.
[3] J Baggio, C Brisset, J L Sommer, et al.. Electrical and optical response of a laser diode to transient ionizing radiation [J]. IEEE Trans on Nuclear Science, 1996, 43(3): 1038-1043.
[4] D Sporea. Effects of gamma- ray irradiation on quantum- well semiconductor lasers[C]. Atlanta: IEEE Radiation Effects Data Workshop, 2004. 137-144.
[5] O Gilard.Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum-well lasers[J]. Appl Phys, 2003, 93(4): 1884-1888.
[7] H S Joo, S C Jeon, B Lee, et al.. Reliability of InGaAs waveguide photodiodes for 40- Gb/s optical receivers[J]. IEEE Trans on Device and Materials Reliability, 2005, 5(2): 262-267.
[8] Ding Ying, Wang Lufeng, Zhao Lingjuan, et al.. Reliability analysis of 1.55 mm DFB laser diodes for optical fiber communication[J]. J Optoelectronics·Laser, 2004, 15(4): 393-396.
[9] Sun Mengxiang, Tan Manqing, Wang Lufeng. Lifetime tests of 1300 nm superluminesent diodes [J]. Acta Optica Sinica, 2008, 28(10): 1994-1997.
[10] Li Lingling, Gu Xunhua, Li Fengqiang, et al.. Reliability assessment method based on GaAs laser performance degradation[J]. J Engineering Design, 2012, 19(3): 166-181.
[11] Deng Aimin, Chen Xun, Zhang Chunhua, et al.. Reliability assessment based on performance degradation data[J]. J Astronautics, 2006, 27(3): 546-552.
[13] Chang Guolong. The Study of the Influence of Radiation Effect on Laser Diodes[D]. Harbin: Harbin Institute of Technology, 2010. 65-72.