[1] Li Zhiguo, Song Zengchao, Sun Dapeng et al.. GaAs MESFET′S reliability and new method of rapid evaluation. [J]. Chinese J. Semiconductors, 2003, 24(8): 856~860
[2] Zhang Chunhua, Wen Xisen et al.. Accelerated life testing techniques [J]. Acta Armamentarii, 2004, 25(4): 485~489
[3] Li Haiyuan, Li Baoming. Test of thermal deformation for electronic devices of high thermal reliability [J]. Spectroscopy and Spectral Analysis, 2002, 22(3): 381~383
[4] Wang Weining, Geng Zhaoxin, Yue Weiwei et al.. Study of real-time interferometry of PCB thermal distortion [J]. Electronics and Packaging, 2004, 4(6): 44~48
[5] A. Mettas, P.Vassiliou. Modeling and analysis of time-dependent stress accelerated life data [C]. Seattle:Annual Reliability and Maintainability Symposium, 2002. 343~348
[6] Guo Chunsheng, Li Zhiguo et al.. A novel method to determine the failure rate using process-stress accelerated test [J]. Chinese J. Semiconductors, 2007, 28(z1): 448~449
[7] Mao Shisong, Wang Lingling. Accelerated Life Testing [M]. Beijing: Science Press, 2000. 1~40
[8] Mo Yuwei. Effect of thermal stress on the semiconductor discrete device failure rate [J]. Electronic Product Reliability and Environmental Laboratory, 1996, 5: 25~28