[1] Jiang H, Tao K, Li H. Structure of TiNx (0 ＜ x ＜ 1.1) films prepared by ion beam-assisted deposition [J]. Thin Solid Films, 1995, 258(1-2): 51-55
[2] Grigorov G I, Martev I N. Ion-stimulated sorption: an ion-assisted technology with new possibilities [J]. Thin Solid Films, 1986, 143(2): 177-185
[3] Neckel A, Rastl P, Eibler R et al. Results of self-consistent band-structure calculations for ScN, ScO, TiC, TiN,TiO, VC, VN and VO [J]. J. Phys. C: Solid State Phys., 1976, 9(4): 579-592
[4] Herzig P, Redinger J, Eibler R et al. Vacancy induced changes in the electronic structure of titanium nitride [J].J. Solid State Chem., 1987, 70(2): 281-294
[5] Eibler R. Electronic structure of ε-Ti2N and δ'-Ti2N [J]. J. Phys. Condens. Matter, 1993, 5(30): 5261-5276
[6] Marksteiner P, Weinberger P, Neckel A et al. Electronic structure of substoichiometric carbides and nitrides of titanium and vanadium [J]. Phys. Rev. B, 1986, 33(2): 812-822
[7] Molarius J M, Korhonen A S, Ristolainen E O. Ti-N phases formed by reactive ion plating [J]. J. Vac. Sci.Technol. A, 1985, 3(6): 2419-2425
[8] Kuznetsov M V, Zhuravlev M V, Shalayeva E V et al. Influence of the deposition parameters on the composition,structure and X-ray photoelectron spectroscopy spectra of Ti-N films [J]. Thin Solid Films, 1992, 215(1): 1-7
[9] Kawamura M, Abe Y, Yanagisawa H et al. Characterization of TiN films prepared by a conventional magnetron sputtering system: influence of nitrogen flow percentage and electrical properties [J]. Thin Solid Films, 1996,287(1-2): 115-119
[10] Zhou X, Dong H K, Li H D et al. Reverse sequence of formation of titanium nitrides by nitrogen implantation [J]. J. Appl. Phys., 1988, 63(10): 4942-4945
[11] Ikeda T, Satoh H. Phase formation and characterization of hard coatings in the Ti-A1-N system prepared by the cathodic arc ion plating method [J]. Thin Solid Films, 1991, 195(1-2): 99-110
