[1] Im J.Auciello O.Baumann P K Composition-control of magnetron-sputter-deposited (Ba_xSr_(1-x))Ti_(1+y)O_(3+z)thin films for voltage tunable devices[J]. Applied Physics Letters, 2000(05)
[2] Scott J F.Araujo C Ferroelectric memories[J]. Science, 1989 (4936)
[3] Takayama R.Tomita Y.Iijima K Preparation and characteristics of pyroelectric inrfared sensors made of c-axis oriented La-modified PbTiO_3 thin films[J]. Journal of Applied Physics, 1987(01)
[4] Kaufman A B Ferroelectric memories for security and identification purposes[J]. IEEE Transactions on Electron Devices1969(06)
[6] Bergman JG Jr, McFee JH, Crane G R,et al. Pyroelectricity and optical second harmonic generation in polyvinylidene fluoride films[J].Appl. Phys. Lett.1971,18(5):203—205.
[7] Bune A, Duchame S, Fridkin V,et al. Novel switching phenomena in ferroelectric Langmuir-Blodgett films[J].Appl. Phys. Lett.,1995,67(26): 3975—3977.
[8] Ducharme S, Reece T J, Othon C M,et al. Ferroelectric polymer langmuir-Blodgett films for nonvolatile memory applications[J].IEEE Trans. DeviceMater Reliab.,2005,5(4): 720—735.
[9] Garn L E, Sharp E J. Use of low-frequency sinusoidal temperaturewaves to separate pyroelectric currents from nonpyroelectric currents. Part I. Theory[J].J. Appl. Phys., 1982,53(12): 8974—8979.
[10] Choi J, Borca C N, Dowben P A,et al. Phase transition in the surface structure in copokyner films of vinylidene fluoride (70%) with trifluoroethylene (30%)[J].Phys. Rev. B, 2000,61(8): 5760—5770.
[11] Chen Ang, ZhiYu. Dielectric relaxor and ferroelectric relaxor: Bi-doped paraelectric SrTiO3[J].J. Appl. Phys., 2002,91(3): 1478—1494.
[12] Yang J, Chu JH, ShenM R, Analysis of diffuse phase transition and relaxorlike behaviors in Pb0.5Sr0.5TiO3 films through dc electric-field dependence of dielectric response [J].Appl. Phys. Lett., 2007,90: 242908.
[13] Whatmore R W. pyroelectric devices and materials[J]. Rep. Prog. Phys., 1986,49(12): 1335—1386.
[14] Felix P, GamotP, Lacheau P,etal. Pyroelectric, dielectric and thermal-properties ofTGS, DTGS and TGFB[J]. Ferroelectrics, 1978,17(1): 543—551.
[15] Putley E H. A method for evaluating the performance of pyroelectric detectors[J].Infrared Phys., 1980,20(3):149—156.
[16] KohilM, SeifertA, Muralt P. Poling of pyroelectric thin films[J].Integrated Ferroelectrics, 1998,22(3): 452—463.
[17] Neumann N, KohlerR, HofmannG. Pyroelectric thin film sensors and arraysbased on P(VDF-TrFE)[J].Integrated Ferroelectrics, 1995,6(1): 213—230.
