• High Power Laser and Particle Beams
  • Vol. 32, Issue 2, 025014 (2020)
Ganping Wang1、1、2、2, Fei Li1、1, Xiao Jin1、1, Falun Song1、1, and Qi Zhang1、1、2、2
Author Affiliations
  • 1Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, P. O. Box 919-1015, Mianyang 621900, China
  • 2Graduate School, China Academy of Engineering Physics, Beijing 100088, China
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    DOI: 10.11884/HPLPB202032.190298 Cite this Article
    Ganping Wang, Fei Li, Xiao Jin, Falun Song, Qi Zhang. Study of ultrafast semiconductor opening switch[J]. High Power Laser and Particle Beams, 2020, 32(2): 025014 Copy Citation Text show less
    Sketches of electric field and plasma concentration profiles during the opening process
    Fig. 1. Sketches of electric field and plasma concentration profiles during the opening process
    Output voltage under different forward current pumping time
    Fig. 2. Output voltage under different forward current pumping time
    Output voltage under different backward current amplitude
    Fig. 3. Output voltage under different backward current amplitude
    Output voltage under different backward current rise time
    Fig. 4. Output voltage under different backward current rise time
    Circuit structure of DSRD-based pulse generator
    Fig. 5. Circuit structure of DSRD-based pulse generator
    Simulation results
    Fig. 6. Simulation results
    Output voltage waveform
    Fig. 7. Output voltage waveform
    Ganping Wang, Fei Li, Xiao Jin, Falun Song, Qi Zhang. Study of ultrafast semiconductor opening switch[J]. High Power Laser and Particle Beams, 2020, 32(2): 025014
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