• Infrared and Laser Engineering
  • Vol. 31, Issue 4, 360 (2002)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Crystal growth of MnxCd1-xIn2Te4 and its physical properties[J]. Infrared and Laser Engineering, 2002, 31(4): 360 Copy Citation Text show less
    References

    [1] JonkerBT, We HY, etal. Chemical ordering: a new direction in diluted magnetic semiconductors[J]. Materials Science Fo rum, 1995, 182-184:435-442.

    [2] Gobba W A, Patterson J D, et al. A comparison between elec tron mobilitiesin Hg1-xMnxTe and Hg1-xCdxTe[J]. Infrared Physics, 1993, 34(3) :311-321.

    [3] Semenov Y G, Stephanovich V A. Mobility of the free magnetic polarons in semimagnetic semiconductors[J]. Materials Science Forum, 1995, 182-184:557-560.

    [4] Palacio F, Campo J, Segredo V, et al. Magnetic characterization of the spin-glass phase in Mnx Cd1-x In2Te4 solid solutions[J]. Materials Science Forum, 1995, 182-184:459-462.

    [5] Sagredo V, Betancourt L. Magneto-structural and spectroscopic investigation of Mnx Cd1-x In2Te4 solid solutions[A]. Proceed ings of Ⅲ Latin American Workshop. Magnetism, Magnetic Materials and Their Applications[C]. World Scientific. Singapore, 1996, 255-259.

    [6] Guerrero E, Qutntero M, Delgado M, et al. T(z) diagram and optical energy gap values of Cd1-xMnxIn2Te4 alloys[J]. Phys Stat Sol (a), 1992, 129:K83-88.

    [7] Delgado G, Chacon C, et al. An examination of the cation orde ring scheme in the room temperature phase of MnIn2Te4 [J].Phys Stat Sol (a), 1992, 134:61-66.

    [8] Launay J C. Crystal growth by THM of CdIn2Te4 and chemical characterization[J]. J Crystal Growth, 1992, 121:202-208.

    [9] Launay J C, Lanbert J T, et al. Crystal growth, characteriza tion and crystal structureofCdIn2Te4[J]. J Materchem, 1995,5(1):165-169.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Crystal growth of MnxCd1-xIn2Te4 and its physical properties[J]. Infrared and Laser Engineering, 2002, 31(4): 360
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