Research Progress of Inorganic Hole Transport Materials in Perovskite Solar Cells

Yu CHEN; Puan LIN; Bing CAI; Wenhua ZHANG

doi:10.15541/jim20230105

Journals >Journal of Inorganic Materials >Volume 38 >Issue 9 >Page 991 > Article

Journal of Inorganic Materials
Vol. 38, Issue 9, 991 (2023)

Research Progress of Inorganic Hole Transport Materials in Perovskite Solar Cells

Yu CHEN^1,2, Puan LIN^1,2, Bing CAI^2,*, and Wenhua ZHANG^1,2,*

Author Affiliations

¹1. Southwest Joint Research Institute, School of Materials and Energy, Yunnan University, Kunming 650500, China

²2. Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China

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DOI: 10.15541/jim20230105 Cite this Article

Yu CHEN, Puan LIN, Bing CAI, Wenhua ZHANG. Research Progress of Inorganic Hole Transport Materials in Perovskite Solar Cells[J]. Journal of Inorganic Materials, 2023, 38(9): 991 Copy Citation Text

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1. (a) Formal (n-i-p) structure and (b) inverted (p-i-n) structure

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Highest occupied molecular orbital (HOMO) (or valence-band) and lowest unoccupied molecular orbital (LUMO) (or conduction-band) energy levels relative to the vacuum of representative inorganic hole transport materials (HOMO and LUMO of Spiro-OMeTAD for comparison)[18]

2. Highest occupied molecular orbital (HOMO) (or valence-band) and lowest unoccupied molecular orbital (LUMO) (or conduction-band) energy levels relative to the vacuum of representative inorganic hole transport materials (HOMO and LUMO of Spiro-OMeTAD for comparison)^[18]

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3. Physical morphology, synthesis process and related properties of nickel-based oxide materials

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4. Morphology and related properties of copper-based oxide materials

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5. Physical morphology and related properties of other oxides and non-oxides

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6. Effect of element doping on device performance

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7. Effect of additive engineering on device performance

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8. Effect of interface engineering on device performance

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Material	Hole concentration, N/cm^-3	Hole mobility, μ/(cm²·V^-1·s^-1)	Conductivity, σ/(S·cm^-1)
Sprio-OMeTAD with Li-TFSI, etc.	7.13×10^15[19]	0.779^[19]	1.53×10^-3[13]
NiO	5.3×10^18[20]	0.12^[20]	1.66×10^-4[21]
Cu:NiO	7.3×10^19[22]	~0.2^[22]	1.25×10^-3[23]
Ni_0.8Li_0.05Mg_0.15O	6.46×10^18[24]	-	2.23×10^-3[24]
CuGaO₂	3.098×10^19[25]	-	4.625×10^-3[25]
Zn:CuGaO₂	1.328×10^20[25]	-	1.39×10^-2[25]
CuCrO₂	-	0.1-1.0^[26]	2.9×10^-2[27]
In:CuCrO₂	7.1×10^18[27]	0.75^[27]	6.9×10^-2[27]
CuScO₂	-	-	2.11×10^-3[28]
CuSCN	-	1.2×10^-3[21]	-
Co₃O₄	-	1.49×10^-2[29]	-
Co₃O₄-SrCO₃	-	6.33×10^-2[29]	-

Table 1. Properties of inorganic hole transport materials (Spiro-OMeTAD for comparison)

Yu CHEN, Puan LIN, Bing CAI, Wenhua ZHANG. Research Progress of Inorganic Hole Transport Materials in Perovskite Solar Cells[J]. Journal of Inorganic Materials, 2023, 38(9): 991

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