• Laser & Optoelectronics Progress
  • Vol. 58, Issue 23, 2314010 (2021)
Tao Wang1, Mingming Liu1, Hao Wang2、*, Yize Wu1, Lei Zhu1, Changhong Wang1, and Jichang Xie3
Author Affiliations
  • 1School of Aeronautical Engineering, Civil Aviation University of China, Tianjin 300300, China
  • 2Engineering technology training center of Civil Aviation University of China, Tianjin 300300, China
  • 3Université de Technologie de Compiègne, Compiègne60200, France
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    DOI: 10.3788/LOP202158.2314010 Cite this Article Set citation alerts
    Tao Wang, Mingming Liu, Hao Wang, Yize Wu, Lei Zhu, Changhong Wang, Jichang Xie. Influence of Laser Excitation Time on Thermal Resistance Effect of TC4 Titanium Alloy in Laser Infrared Nondestructive Testing[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2314010 Copy Citation Text show less
    Experimental schematic of laser infrared thermal imaging detection. (a) Laser infrared thermal imaging test system; (b) laser excitation principle
    Fig. 1. Experimental schematic of laser infrared thermal imaging detection. (a) Laser infrared thermal imaging test system; (b) laser excitation principle
    Experimental geometric model and experimental platform. (a) Geometric model and its temperature field distribution; (b) experimental platform
    Fig. 2. Experimental geometric model and experimental platform. (a) Geometric model and its temperature field distribution; (b) experimental platform
    Infrared thermal images of laser excitation point region of sample under different cooling time. (a) 4 s; (b) 8 s; (c) 12 s; (d) 16 s
    Fig. 3. Infrared thermal images of laser excitation point region of sample under different cooling time. (a) 4 s; (b) 8 s; (c) 12 s; (d) 16 s
    Temperature curves of model under different excitation time and temperature of each point on line between excitation point and defect center point. (a) Excitation time is 1 s; (b) excitation time is 2 s; (c) excitation time is 3 s; (d) temperature distribution of each point on line between excitation point and defect center point
    Fig. 4. Temperature curves of model under different excitation time and temperature of each point on line between excitation point and defect center point. (a) Excitation time is 1 s; (b) excitation time is 2 s; (c) excitation time is 3 s; (d) temperature distribution of each point on line between excitation point and defect center point
    Comparison diagram of simulation results and experimental results at different locations. (a) Temperature contrast diagram of excitation point; (b) temperature contrast diagram of defect center point
    Fig. 5. Comparison diagram of simulation results and experimental results at different locations. (a) Temperature contrast diagram of excitation point; (b) temperature contrast diagram of defect center point
    Simulation model and surface temperature curve. (a) Simulation model; (b) temperature curves at point A; (c) temperature curves at point B; (d) surface temperature difference curves
    Fig. 6. Simulation model and surface temperature curve. (a) Simulation model; (b) temperature curves at point A; (c) temperature curves at point B; (d) surface temperature difference curves
    Fitting curve of excitation time and maximum temperature difference
    Fig. 7. Fitting curve of excitation time and maximum temperature difference
    ParameterSpecific heat capacity /(J⋅kg-1⋅K-1Density /(kg⋅m-3Thermal conductivity /(W⋅m-1⋅K-1Thermal expansion coefficient /(10-6 K-1
    Value71049407.57.06
    Table 1. TC4 material properties
    Heating time /sMaximum temperature difference /℃
    Original valueConversion value(x′Original valueConversion value(y′
    41.3381.1221.2300
    31.0065.9521.0000
    20.6745.9360.6965
    10.3326.6960.4047
    Table 2. Conversion relationship between different excitation time and standard defect parameters
    Tao Wang, Mingming Liu, Hao Wang, Yize Wu, Lei Zhu, Changhong Wang, Jichang Xie. Influence of Laser Excitation Time on Thermal Resistance Effect of TC4 Titanium Alloy in Laser Infrared Nondestructive Testing[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2314010
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