Horizontal unseeded vapor growth (HUVG) of a Pb1-xSnxTe diode laser

Zhu Xiaochun; Cao Gendi; Zhang Weizai; Yang Jianqun; Wang Hailong

Journals >Chinese Journal of Lasers >Volume 10 >Issue 10 >Page 704 > Article

Chinese Journal of Lasers
Vol. 10, Issue 10, 704 (1983)

Horizontal unseeded vapor growth (HUVG) of a Pb_1-xSn_xTe diode laser

Zhu Xiaochun, Cao Gendi, Zhang Weizai, Yang Jianqun, and Wang Hailong

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[in Chinese]

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Zhu Xiaochun, Cao Gendi, Zhang Weizai, Yang Jianqun, Wang Hailong. Horizontal unseeded vapor growth (HUVG) of a Pb_1-xSn_xTe diode laser[J]. Chinese Journal of Lasers, 1983, 10(10): 704 Copy Citation Text

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Abstract

In this paper, we report a lead salt tunable diode laser fabricated by HUVG. At 12K, the threshold current is 1.6A, the emission wavelength is 10.2μm.

Zhu Xiaochun, Cao Gendi, Zhang Weizai, Yang Jianqun, Wang Hailong. Horizontal unseeded vapor growth (HUVG) of a Pb_1-xSn_xTe diode laser[J]. Chinese Journal of Lasers, 1983, 10(10): 704

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