• Journal of Infrared and Millimeter Waves
  • Vol. 34, Issue 5, 613 (2015)
LI Te1、*, HAO Er-Juan2, and ZHANG Yue1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.11972/j.issn.1001-9014.2015.05.017 Cite this Article
    LI Te, HAO Er-Juan, ZHANG Yue. An asymmetric heterostructure waveguide structure for semiconductor lasers[J]. Journal of Infrared and Millimeter Waves, 2015, 34(5): 613 Copy Citation Text show less
    References

    [1] Alford W J, Raymond T D, Allerman A A. High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser [J]. Journal of the Optical Society of America B, 2002, 19(4): 663-666.

    [2] Bugajski M, Mroziewicz B, Reginski K, et al. High power QW SCH InGaAs/GaAs lasers for 980-nm band [J]. Bulletin of the Polish academy of Sciences, 2005, 53(2): 113-122.

    [5] Malag A, Dabrowska E, Teodorczyk M, et al. Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes [J]. J. Quantum Elect. 2012, 48(4):465-471.

    [6] Buda M, Hay J, Tan H H, et al. Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design [J]. J. Quantum Elect. 2003, 39(5):625-633.

    [8] WEI Gao, Mastrovito A, LUO Ke-Jian, et al. High-power 1060-nm InGaAs/GaAs single-mode laser diodes [C] Proc. SPIE. 2005, 5711:58-65.

    [9] Fukunaga T, Wada M, Hayakawa T, Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well laser [J]Appl. Phys. Lett. 1996, 69:248-250.

    [10] Hasler K H, Sumpf B, Adamiec P, et al. 5W DBR Tapered Lasers Emitting at 1060 nm with a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality [J]. Photon. Technol. Lett., 2008, 20(19):1648-1650

    LI Te, HAO Er-Juan, ZHANG Yue. An asymmetric heterostructure waveguide structure for semiconductor lasers[J]. Journal of Infrared and Millimeter Waves, 2015, 34(5): 613
    Download Citation