Based on a 0.18 μm BCD process, an externally adjustable foldback current-limit circuit for LDO was proposed. This new circuit had both current limiting and foldback functions. The current limiting part clamped the maximum output through a loop formed by current mirrors. The foldback part used a negative feedback loop formed by an error amplifier to generate a current foldback output current proportional to the output voltage. Compared with traditional current-limit structures, this new structure saved a lot of power consumption and protected the power MOSFET from being burnt. Compared with the traditional foldback structures, this structure could easily adjust the current limit and the foldback point by adjusting two external resistors to avoid the voltage regulator from latching up. At 1.2 V typical output, the simulation verification results of the LDO circuit showed that the current limit range was 215~350 mA, and the foldback voltage range was 450~900 mV while adjusting four different external resistance values. The power consumption during short-circuited region was reduced to 230 mW.