• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 5, 544 (2003)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research on All-solid Microchip Nd:YVO4 Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 544 Copy Citation Text show less
    References

    [1] He Jingliang, Hou Wei, Zhang Hengli, et al. Cr4+:YAG as a passive Q-switch in a diode-pumped CW Nd:YVO4 laser [J]. Chin. Phys. Lett., 1998, 15:883

    [2] Chen Y F, Tsai S W, Wang S C. High-power diode-pumped Q-switched and modelocked Nd:YVO4 laser with a Cr4+:YAG saturable absorber [J]. Opt. Lett., 2000(25):1442-1444

    [3] Chen Yungfu, Lee Jianlung, Hsieh Hungdau, et al. Analysis of passively Q-switched lasers with simultaneous modelocking [J]. IEEE J. Q. E., 2002, 38(3):

    [4] Chen Y, Huang T, et al. Compact and efficient 3.2 W diode-end-pumped Nd:YVO4/KTP green laser [J]. Appl.Opt., 1998, 37(24): 5727-5730

    [5] He Jingliang, Hou Wei, Zhang Hengli, et al. Continuous wave output of 5.5 W at 532 nm by intracavity frequency doubling of an Nd:YVO4 laser [J]. Chin. Phys. Lett., 1998, 15(6): 418

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research on All-solid Microchip Nd:YVO4 Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 544
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