The output characteristics of the one-dimensional In0.3Ga0.7As solar cells irradiated by a continuous wave (CW) laser with a wavelength of 1070 nm are studied by the finite element numerical simulation method. The validity of the model is verified by the calculation of the distribution of the recombination rate of the internal carrier in solar cells under a zero-bias. The effect of the bias voltage on the carrier recombination rate distribution and the influence of the structure of the solar cell on the photoelectric conversion performance are studied, and the current density-voltage curve of the solar cell is obtained under a laser power density of 100 mW·cm-2. The research results show that, with the increase of the forward bias, the recombination rate in the space charge region increases rapidly, so the forward bias is the main factor which influences the conversion efficiency. The short-circuit current of the cell decreases exponentially with the increase of the depth of the pn junction, however the open circuit voltage increases first and then tends to saturation with the increase of the thickness of the base area. These results provide a reference for the design of solar cells.