• Chinese Optics Letters
  • Vol. 9, Issue 2, 023101 (2011)
Meiping Zhu1、2, Kui Yi1, Zhengxiu Fan1, and Jianda Shao1
Author Affiliations
  • 1Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/COL201109.023101 Cite this Article Set citation alerts
    Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101 Copy Citation Text show less
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    Data from CrossRef

    [1] Meiping Zhu, Kui Yi, Detlef Arhilger, Hongji Qi, Jianda Shao. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium. Thin Solid Films, 540, 17(2013).

    Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101
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