Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

Meiping Zhu; Kui Yi; Zhengxiu Fan; Jianda Shao

doi:10.3788/COL201109.023101

Journals >Chinese Optics Letters >Volume 9 >Issue 2 >Page 023101 > Article

Chinese Optics Letters
Vol. 9, Issue 2, 023101 (2011)

Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

Meiping Zhu^1、2, Kui Yi¹, Zhengxiu Fan¹, and Jianda Shao¹

Author Affiliations

¹Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/COL201109.023101 Cite this Article Set citation alerts

Meiping Zhu, Kui Yi, Zhengxiu Fan, Jianda Shao. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. Chinese Optics Letters, 2011, 9(2): 023101 Copy Citation Text

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