• Chinese Optics Letters
  • Vol. 7, Issue 3, 03226 (2009)
S. M., H. Abu, and Z. Hassan
Author Affiliations
  • Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
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    DOI: 10.3788/COL20090703.0226 Cite this Article Set citation alerts
    S. M., H. Abu, Z. Hassan. InGaN/GaN laser diode characterization and quantum well number effect[J]. Chinese Optics Letters, 2009, 7(3): 03226 Copy Citation Text show less
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    CLP Journals

    [1] Tingting Jia, Shengming Zhou, Hui Lin, Hao Teng, Xiaorui Hou, Jianqi Liu, Jun Huang, Min Zhang, Jianfeng Wang, Ke Xu. Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates[J]. Chinese Optics Letters, 2011, 9(9): 093101

    [2] Liang Xuemei, Qin Li, Wang Ye, Yang Ye, Li Zaijin, Wang Chao, Ning Yongqiang, Wang Lijun. 808 nm Edge-Emitting Diode Lasers Characteristic Temperatures[J]. Acta Optica Sinica, 2010, 30(5): 1390

    [3] Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302

    Data from CrossRef

    [1] A. J. Ghazai, S. M. Thahab, H. Abu Hassan, Z. Hassan. A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/Al x In y Ga1?x?y N double quantum well laser diodes. Science China Technological Sciences, 54, 47(2011).

    [2] Alaa Jabbar Ghazai, Haslan Abu Hassan, Zanuri Bint Hassan. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices. Superlattices and Microstructures, 95, 95(2016).

    S. M., H. Abu, Z. Hassan. InGaN/GaN laser diode characterization and quantum well number effect[J]. Chinese Optics Letters, 2009, 7(3): 03226
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