InGaN/GaN laser diode characterization and quantum well number effect

S. M.; H. Abu; Z. Hassan

doi:10.3788/COL20090703.0226

Journals >Chinese Optics Letters >Volume 7 >Issue 3 >Page 03226 > Article

Chinese Optics Letters
Vol. 7, Issue 3, 03226 (2009)

InGaN/GaN laser diode characterization and quantum well number effect

S. M., H. Abu, and Z. Hassan

Author Affiliations

Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

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DOI: 10.3788/COL20090703.0226 Cite this Article Set citation alerts

S. M., H. Abu, Z. Hassan. InGaN/GaN laser diode characterization and quantum well number effect[J]. Chinese Optics Letters, 2009, 7(3): 03226 Copy Citation Text

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S. M., H. Abu, Z. Hassan. InGaN/GaN laser diode characterization and quantum well number effect[J]. Chinese Optics Letters, 2009, 7(3): 03226

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