• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 1, 2021084 (2022)
Qi-Wen ZHANG1、2, Hong-Lei CHEN1, and Rui-Jun DING1、*
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technology Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.11972/j.issn.1001-9014.2022.01.033 Cite this Article
    Qi-Wen ZHANG, Hong-Lei CHEN, Rui-Jun DING. High precision time-to-digital conversion circuit for mercury cadmium telluride APD detector at 77 K[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021084 Copy Citation Text show less
    Excess noise factor of APD FPA and GNDCD with different bias
    Fig. 1. Excess noise factor of APD FPA and GNDCD with different bias
    Comparison of this article and DRS in NEPh
    Fig. 2. Comparison of this article and DRS in NEPh
    I-V curves of NMOS at 77 K and 300 K. The size of the NMOS is W/L=20 μm/0.55 μm
    Fig. 3. I-V curves of NMOS at 77 K and 300 K. The size of the NMOS is W/L=20 μm/0.55 μm
    ROIC overall block diagram
    Fig. 4. ROIC overall block diagram
    TDC sequence chart
    Fig. 5. TDC sequence chart
    The comparator schematic diagram
    Fig. 6. The comparator schematic diagram
    Simulation results of input offset voltage of comparator
    Fig. 7. Simulation results of input offset voltage of comparator
    Vernier TDC structural diagram
    Fig. 8. Vernier TDC structural diagram
    The delay cell circuit
    Fig. 9. The delay cell circuit
    Delay time for different temperatures and different bias voltages
    Fig. 10. Delay time for different temperatures and different bias voltages
    The schematic block diagram of TDC circuit Testing system
    Fig. 11. The schematic block diagram of TDC circuit Testing system
    Test sequence diagram
    Fig. 12. Test sequence diagram
    Coarse counting test results at room temperature and low temperature
    Fig. 13. Coarse counting test results at room temperature and low temperature
    Fine counting value at room temperature and low temperature test
    Fig. 14. Fine counting value at room temperature and low temperature test
    (a)Differential non-linearity,(b)integral non-linearity
    Fig. 15. (a)Differential non-linearity,(b)integral non-linearity
    The output results of fine counting under different delay time
    Fig. 16. The output results of fine counting under different delay time
    Model parametersUnitNMOSPMOS
    77 K300 K77 K300 K
    Vth0V0.9580.719-1.121-0.724
    μ0cm2/Vs1 370434564172
    vsatm/s9.59E47.47E49.61E43.81E4
    RdswΩ-μm1 663.21 373.163 841.312 530.47
    Table 1. Extraction results of the MOSFET parameters
    Gain77.99 dB
    Delay Time10.01 ns
    Resolution12 bits
    Noise7.621v/sqrt(hz)@1MHz
    Table 2. Comparator simulation results
    Time interval/ns

    Coarse counter

    (Binary output)

    Fine counter

    (decimal output)

    846100 00019
    847100 00027

    848

    849

    100 000

    100 000

    34

    42

    850100 00050
    Table 3. Vernier TDC simulated output
    Performance parameterThis workRaytheon19Southeast University20
    Technology

    CSMC CMOS

    0.5 μm

    TSMC CMOS 0.18 μmCSMC CMOS 0.5 μm

    Temperature

    Resolution

    77 K

    236.28 ps

    300 K

    297.47 ps

    77 K

    166.67 ps

    300K

    0.8 ns

    Dynamic Range12 Bits12 Bits12 Bits13 Bits
    Supply Voltage5 v5 v1.8 V5 V
    Table 4. Compare the performance parameters of this work and Raytheon at 300 K and 77 K
    Qi-Wen ZHANG, Hong-Lei CHEN, Rui-Jun DING. High precision time-to-digital conversion circuit for mercury cadmium telluride APD detector at 77 K[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021084
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