• Chinese Journal of Quantum Electronics
  • Vol. 25, Issue 2, 240 (2008)
[in Chinese]1、2、*, [in Chinese]1、2, [in Chinese]2, [in Chinese]2, [in Chinese]1, and [in Chinese]
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and properties of ZnO film on CVD diamond film by pulsed laser deposition[J]. Chinese Journal of Quantum Electronics, 2008, 25(2): 240 Copy Citation Text show less

    Abstract

    ZnO films were successfully deposited on the(110),(100)-textured diamond films by pulsed laser deposition(PLD)method. Annealing treatments for as-deposited samples were also performed in nitrogen ambient. The effect of different substrates and annealing atmosphere on the structural and optical properties of the deposited films was investigated by means of X-ray diffraction(XRD)and photoluminescence(PL)measurements. The best crystal quality of ZnO film was obtained on the(100)orientation diamond film. After annealing in nitrogen ambient,the intensity of ultraviolet(UV)emission decreases greatly and the deep-level emission is enhanced. It is contributed to the introduction of a great deal of oxygen vacancies into ZnO films during the annealing process,which can be further confirmed by X-ray photoelectronic spectroscopy(XPS).
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and properties of ZnO film on CVD diamond film by pulsed laser deposition[J]. Chinese Journal of Quantum Electronics, 2008, 25(2): 240
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