• Journal of Infrared and Millimeter Waves
  • Vol. 23, Issue 5, 329 (2004)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. MAGNETO-TRANSPORT OF ELECTRON SYMMETRIC AND ANTISYMMRTRIC STATES IN HIGHLY DOPED InGaAs/InAlAs SINGLE QUANTUM WELL[J]. Journal of Infrared and Millimeter Waves, 2004, 23(5): 329 Copy Citation Text show less
    References

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    [2] Hu C M, Heitmann D. Bilayer quantum transistor [J]. Appl. Phys.Lett., 2000, 77(10): 1475-1477.

    [3] Gui Y, Guo S, Zheng G, et al. Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor [J]. Appl. Phys.Lett., 2000, 76(10): 1309-1311.

    [4] Das B, Miller D C, Datta S, et al. Evidence for spin splitting in InxGa1-xAs/In0.52Al0.48As heterostructures as B0 [J]. Phys. Rev. B, 1989, 39(2): 1411-1414.

    [5] Skuras E, Kumar R, Williams R L, et al. Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit [J]. Semicond. Sci. Technol., 1991, 6(6): 535-546.

    [6] Brana A F, Diaz-Paniagua C, Batallan F, et al. Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements [J]. J. Appl. Phys., 2000, 88(2): 932-937.

    [7] Basu P, Nag B. Estimation of alloy scattering potential in ternaries from the study of two-dimensional electron transport [J]. Appl. Phys. Lett., 1983, 43(7): 689-691.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. MAGNETO-TRANSPORT OF ELECTRON SYMMETRIC AND ANTISYMMRTRIC STATES IN HIGHLY DOPED InGaAs/InAlAs SINGLE QUANTUM WELL[J]. Journal of Infrared and Millimeter Waves, 2004, 23(5): 329
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