Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 1 >Page 81 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 1, 81 (2005)

Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81 Copy Citation Text

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Abstract

The strained InGaAs/GaAs quantum wells (QWs) for 980 nm LD were grown by MOCVD. The effects of growth temperature and growth rate of InGaAs/GaAs QWs were investigated. We applied the optimized growth condition to 980 high power LD growth. Without coating, an optical power output of 100 mW, Ith of 19 mA, differential efficiency of 0.6 W/A were obtained.

Keywords

metallorganic chemical vapor deposition optoelectronics semiconductor lasers strain quantum wells

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