• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 2, 384 (2022)
Lu-Hong WAN1、2、3, Xiu-Mei SHAO1、2、*, Xue LI1、2、**, Yi GU1、2, Ying-Jie MA1、2, and Tao LI1、2
Author Affiliations
  • 1State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 3University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.11972/j.issn.1001-9014.2022.02.002 Cite this Article
    Lu-Hong WAN, Xiu-Mei SHAO, Xue LI, Yi GU, Ying-Jie MA, Tao LI. Interfacial properties between Al2O3 and In0.74Al0.26As epitaxial layer on MIS capacitors[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 384 Copy Citation Text show less
    References

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    [2] X Li, H Gong, J X Fang et al. The development of InGaAs short wavelength infrared focal plane arrays with high performance. Infrared Physics and Technol, 80, 112-119(2017).

    [3] A Rouvié, J L Reverchon, O Huet et al. InGaAs focal plane array developments at III-V Lab. Proc. SPIE, 8353, 835308(2012).

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    [9] L H Wan, G Q Cao, X M Shao et al. High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films. J. Appl. Phys, 126, 033101(2019).

    [10] L H Wan, X M Shao, Y J Ma et al. Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer. Infrared Physics and Technol, 109, 103389(2020).

    [11] Y G Zhang, Y Gu, C Zhu et al. Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors. Infrared Phys. Technol, 47, 257-262(2006).

    [12] R Engel-Herbert, Y Hwang, S Stemmer. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces. J. Appl. Phys, 108, 124101(2010).

    [13] R Castagné, A Vapaille. Description of the SiO2-Si interface properties by means of vary low frequency MOS capacitance measurements. Surf. Sci, 28, 157(1971).

    Lu-Hong WAN, Xiu-Mei SHAO, Xue LI, Yi GU, Ying-Jie MA, Tao LI. Interfacial properties between Al2O3 and In0.74Al0.26As epitaxial layer on MIS capacitors[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 384
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