Author Affiliations
1Department of Electronic Engineering, Xiamen University, Xiamen 361005, China2Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China3Key Laboratory of Transparent Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai 201899, China4School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China5e-mail: xdxu79@mail.sic.ac.cnshow less
Fig. 1. Schematic of diode-pumped Er:Y2O3 ceramic lasers. IM, input mirror; OC, output coupler.
Fig. 2. Dependence of average output power on absorbed power of self-Q-switched Er:Y2O3 ceramic lasers; inset, corresponding laser spectrum at the highest output power.
Fig. 3. Typical self-Q-switched single-pulse profiles with corresponding pulse trains as insets.
Fig. 4. (a) XRD patterns and (b) Raman spectra of the bulk WS2 and few-layer WS2 samples; (c) AFM image and (d) height profile of an as-prepared few-layer WS2 sample.
Fig. 5. Transmissions of the blank CaF2 substrate and CaF2 substrate with WS2 thin film.
Fig. 6. Saturable absorption of the WS2 saturable absorber used.
Fig. 7. Dependence of average output power on absorbed power of WS2-based Q-switched Er:Y2O3 ceramic lasers; inset, corresponding laser spectrum at the highest output power.
Fig. 8. Typical single-pulse profile of a passively Q-switched Er:Y2O3 ceramic laser; inset, corresponding pulse trains.
Fig. 9. (a) Stability measurement of average output power in 1 h and (b) temporal profiles of 12 superimposed pulses recorded every 5 min in 1 h.
Fig. 10. Dependences of (a) pulse width, (b) pulse repetition rate, (c) pulse energy, and (d) pulse peak power on absorbed powers.
Fig. 11. Wavelength tunings of the Er:Y2O3 ceramic laser emissions around 2710, 2717, 2727, and 2740 nm.
2D Material | Laser Material | Max Output Power | Min Pulse Width | Max Pulse Energy | Ref. | | | 1.03 W | 335 ns | 8.5 μJ | [22] | | | 73 mW | 670 ns | 0.95 μJ | [24] | | | 0.58 W | 508 ns | 12.1 μJ | [25] | BP | | 180 mW | 702 ns | 2.34 μJ | [28] | Graphene | Ho, Pr:LLF | 88 mW | 937.5 ns | 1.6 μJ | [34] | | | 233.5 mW | 0.72 μs | 7.92 μJ | This work |
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Table 1. Diode-Pumped Passively Q-Switched Mid-Infrared Solid-State Lasers Based on 2D Material Saturable Absorbers