• Journal of Semiconductors
  • Vol. 44, Issue 8, 082001 (2023)
Yao Li1, Haiou Zhu1、2, and Zongpeng Song2、*
Author Affiliations
  • 1New Materials and New Energies, Shen Zhen Technology University, Shenzhen 518118, China
  • 2Analysis and Testing Center, Shen Zhen Technology University, Shenzhen 518118, China
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    DOI: 10.1088/1674-4926/44/8/082001 Cite this Article
    Yao Li, Haiou Zhu, Zongpeng Song. Pressure manipulation of ultrafast carrier dynamics in monolayer WS2[J]. Journal of Semiconductors, 2023, 44(8): 082001 Copy Citation Text show less
    (Color online) Experimental setup of the CVD growth of monolayer WS2 sample.
    Fig. 1. (Color online) Experimental setup of the CVD growth of monolayer WS2 sample.
    (Color online) The characterization of monolayer WS2. (a) Optical image of a monolayer WS2. (b) Schematics of Raman modes of E2g1 and A1g. (c) Raman spectra of monolayer WS2 sample. (d) PL spectra of monolayer WS2 sample. (e) AFM image of monolayer WS2 sample. (f) Height image intensity profile along the black line in (e).
    Fig. 2. (Color online) The characterization of monolayer WS2. (a) Optical image of a monolayer WS2. (b) Schematics of Raman modes of E2g1 and A1g. (c) Raman spectra of monolayer WS2 sample. (d) PL spectra of monolayer WS2 sample. (e) AFM image of monolayer WS2 sample. (f) Height image intensity profile along the black line in (e).
    (Color online) Pressure-induced Raman vibration in monolayer WS2. (a) Evolution of the Raman spectrum with pressure for monolayer WS2 sample. (b) Raman vibrations of monolayer WS2 as a function of pressure.
    Fig. 3. (Color online) Pressure-induced Raman vibration in monolayer WS2. (a) Evolution of the Raman spectrum with pressure for monolayer WS2 sample. (b) Raman vibrations of monolayer WS2 as a function of pressure.
    (Color online) (a) Evolution of the PL spectra of monolayer WS2 sample with pressures. (b) PL peaks of monolayer WS2 as a function of pressure.
    Fig. 4. (Color online) (a) Evolution of the PL spectra of monolayer WS2 sample with pressures. (b) PL peaks of monolayer WS2 as a function of pressure.
    (Color online) (a) Schematic of material structure and TA measurements of monolayer WS2 in the DAC. (b) Evolution of TA spectra of monolayer WS2 under pressure from 0.30 to 3.25 Gpa. (c) A exciton peaks as a function of pressures.
    Fig. 5. (Color online) (a) Schematic of material structure and TA measurements of monolayer WS2 in the DAC. (b) Evolution of TA spectra of monolayer WS2 under pressure from 0.30 to 3.25 Gpa. (c) A exciton peaks as a function of pressures.
    (Color online) The transient absorption signals of monolayer WS2 with different pressures: (a) 0.55 GPa; (b) 0.89 Gpa; (c) 1.22 Gpa; (d) 1.56 GPa; (e) 1.89 GPa; (f) 2.23 Gpa; (g) 2.56 Gpa; (h) 2.91 GPa. The red lines are fitting.
    Fig. 6. (Color online) The transient absorption signals of monolayer WS2 with different pressures: (a) 0.55 GPa; (b) 0.89 Gpa; (c) 1.22 Gpa; (d) 1.56 GPa; (e) 1.89 GPa; (f) 2.23 Gpa; (g) 2.56 Gpa; (h) 2.91 GPa. The red lines are fitting.
    (Color online) The time constants (a) τ1 and (b) τ2 of A exciton as a function of pressure.
    Fig. 7. (Color online) The time constants (a) τ1 and (b) τ2 of A exciton as a function of pressure.
    Yao Li, Haiou Zhu, Zongpeng Song. Pressure manipulation of ultrafast carrier dynamics in monolayer WS2[J]. Journal of Semiconductors, 2023, 44(8): 082001
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