A six-layer thin-film sample constructed from the transition metal W and dielectric material SiO2 is prepared through the magnetron sputtering apparatus. The microstructure of the film is Cu(>100.0 nm)/SiO2(63.5 nm)/W(11.0 nm)/SiO2(60.0 nm))/W(5.4 nm)/SiO2(75.5 nm). The fabricated sample has a solar absorptance of 95.3% in the wavelength range of 250-2500 nm. Under the low vacuum (6 Pa) condition, the reflectance characteristics of the sample after annealing at 400 ℃ for 72 h show no obvious change, which proves that the sample has an excellent thermal stability. In addition, an infrared thermal imager is adopted for the real-time and in-situ characterization of the infrared radiation from the sample and it is proved that the sample has a low radiation characteristic. These unique properties imply that the sample is highly suited for its application in solar thermal conversion.