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    Journals >Chinese Journal of Lasers >Volume 9 >Issue 2 >Page 109 > Article
    • Chinese Journal of Lasers
    • Vol. 9, Issue 2, 109 (1982)
    [in Chinese]
    [in Chinese] and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese]. [J]. Chinese Journal of Lasers, 1982, 9(2): 109 Copy Citation Text show less

    Abstract

    New technologies using proton bombardment to form Ga1-xAlx AsGaAs DH lasers of stripe-geometry are described and our experimental resultsare given.
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    [in Chinese], [in Chinese]. [J]. Chinese Journal of Lasers, 1982, 9(2): 109
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    Paper Information
    Recommended Topics
    laser devices and laser physics
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