Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

M. V. Rudenko; N. V. Gaponenko; E. B. Chubenko; E. I. Lashkovskaya; K. V. Shustsikava; Yu. V. Radyush; V. D. Zhivulko; A. V. Mudryi; M. Wang; E. V. Monaico; M. V. Stepikhova; A. N. Yablonskiy

doi:10.1142/S2010135X21500314

Abstract

Erbium-doped barium titanate (BaTiO₃:Er) xerogel film with a thickness of about 500 nm was formed on the porous strontium titanate (

{SrTiO}_{3})

xerogel film on Si substrate after annealing at 800

^{\circ}

C or 900

^{\circ}

C. The elaborated structures show room temperature upconversion luminescence under 980 nm excitation with the photoluminescence (PL) bands at 523, 546, 658, 800 and 830 nm corresponding to ²

H_{11 / 2} \to

⁴

I_{15 / 2}

, ⁴

S_{3 / 2} \to^{4}

I_{15 / 2}

, ⁴

F_{9 / 2} \to^{4}

I_{15 / 2}

and ⁴

I_{9 / 2} \to

⁴

I_{15 / 2}

transitions of trivalent erbium. Raman and X-ray diffraction (XRD) analysis of BaTiO₃:Er\porous SrTiO₃\Si structure showed the presence of perovskite phases. Its excellent up-conversion optical performance will greatly broaden its applications in perovskite solar cells and high-end anti-counterfeiting technologies.Erbium-doped barium titanate (BaTiO₃:Er) xerogel film with a thickness of about 500 nm was formed on the porous strontium titanate (

{SrTiO}_{3})

xerogel film on Si substrate after annealing at 800

^{\circ}

C or 900

^{\circ}

C. The elaborated structures show room temperature upconversion luminescence under 980 nm excitation with the photoluminescence (PL) bands at 523, 546, 658, 800 and 830 nm corresponding to ²

H_{11 / 2} \to

⁴

I_{15 / 2}

, ⁴

S_{3 / 2} \to^{4}

I_{15 / 2}

, ⁴

F_{9 / 2} \to^{4}

I_{15 / 2}

and ⁴

I_{9 / 2} \to

⁴

I_{15 / 2}

transitions of trivalent erbium. Raman and X-ray diffraction (XRD) analysis of BaTiO₃:Er\porous SrTiO₃\Si structure showed the presence of perovskite phases. Its excellent up-conversion optical performance will greatly broaden its applications in perovskite solar cells and high-end anti-counterfeiting technologies.