• Acta Photonica Sinica
  • Vol. 45, Issue 1, 104001 (2016)
BAI Hong-gang1、* and JIN Ying-ji2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20164501.0104001 Cite this Article
    BAI Hong-gang, JIN Ying-ji. Influence of the Preset Condition on the Quantum Dot Infrared Photodetectors Dark Current Characteristics[J]. Acta Photonica Sinica, 2016, 45(1): 104001 Copy Citation Text show less
    References

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    [7] YE Z, CAMPBELL J C, CHEN Z, et al. InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers[J]. Journal of Applied Physics, 2002, 92(12): 7462-7468.

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    [10] LIN L, ZHEN H L, LI N, et al. Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors[J]. Applied Physics Letters, 2010, 97: 193511.

    [11] LIAO C C, TANG S F, CHEN T C, et al. Electronic characteristics of doped inas/gaas quantum dot photodetector: temperature dependent dark current and noise density[C]. SPIE, 2006, 6119: 611905.

    [12] GHASEMI F, RAZI S. Cuboid GaN/AlGaN quantum dot infrared photodetector: photoconductive gain and capture probability[J]. Optik, 2013, 124: 859-863.

    [13] CARBONE A, INTROZZI R, LIU H C. Photo and dark current noise in self-assembled quantum dot infrared photodetectors[J]. Infrared Physics & Technology, 2009, 52: 260-263.

    [14] LIU Hong-mei, ZHANG Jian-qi. Dark current and noise analyses of quantum dot infrared Photodetectors[J]. Applied Optics, 2012, 51(13): 2767-2771.

    [15] BAI Hong-gang, ZHANG Jian-qi, WANG Xiao-rui, et al. Noise characteristics investigation in quantum dot infrared photodetectors[J]. Infrared Physics & Technology, 2013, 60: 207-215.

    [16] KIM E T, MADHUKAR A, YE Z, et al. High detectivity InAs quantum dot infrared photodetectors[J]. Applied Physics Letters, 2004, 84(17): 3277-3279.

    BAI Hong-gang, JIN Ying-ji. Influence of the Preset Condition on the Quantum Dot Infrared Photodetectors Dark Current Characteristics[J]. Acta Photonica Sinica, 2016, 45(1): 104001
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