The influence of the applied electric field and temperature on the dark current of quantum dot infrared photodetectors (QDIPs) was simulated and analyzed, which is based on the dark current model including the common influence of the microscale and the nanoscale electron transport as well as the dependence of the drift velocity of electrons on the applied electric field. The results show that the dark current model has an excellent agreement with the experimental data at 0~25 kV/cm applied electric field. The increasing of the dark current goes with the rise of the applied electric field, and the dark current increases rapidly below about 6 kV/cm, but it increases slowly above about 6 kV/cm. The rapid increase of the dark current goes with the increase of the temperature. The research can provide the theoretical reference in the optimization of the device design and the improvement of the performance of the quantum dot infrared photodetectors.