Sergey Yu. Karpov. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”[J]. Photonics Research, 2017, 5(2): A7
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Fig. 1. (a) Hole localization radius and energy factors corresponding to different electron kinetic energies Ee and (b) B/C ratio as a function of emission wavelength. Balls are data from [15], lines are calculations.
Fig. 2. Experimental [15] (balls) and theoretical (lines) radiative recombination constants calculated for (a) bulk InGaN and representative QWs and (b) for bulk InGaN with account of hole localization at different electron kinetic energies. Note that theoretical scales are shifted with respect to the experimental one for better comparison of spectral dependence of the B-constants.
Fig. 3. Experimental [15] (balls) and theoretical (lines) total Auger recombination constants calculated for (a) bulk InGaN with the account of phonon-assisted processes and (b) hole localization. Note that theoretical scales are shifted with respect to the experimental one for better comparison of spectral dependence of the C-constants.