Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

Sergey Yu. Karpov

doi:10.1364/PRJ.5.0000A7

Journals >Photonics Research >Volume 5 >Issue 2 >Page A7 > Article

Photonics Research
Vol. 5, Issue 2, A7 (2017)

Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

Sergey Yu. Karpov

Author Affiliations

STR Group—Soft-Impact, Ltd., P.O. Box 83, 27 Engels Ave., St. Petersburg 194156, Russia (sergey.karpov@str-soft.com)

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DOI: 10.1364/PRJ.5.0000A7 Cite this Article Set citation alerts

Sergey Yu. Karpov. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”[J]. Photonics Research, 2017, 5(2): A7 Copy Citation Text

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Sergey Yu. Karpov. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”[J]. Photonics Research, 2017, 5(2): A7

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