To meet the demand for the few-modes optical communication system, a few-mode semiconductor laser based on the compressive strain quantum well structure in InP/InGaAsP materials is designed and manufactured. The device can work in the fundamental mode and the 1st order lateral mode depending on the injection current level. The LP01 or the LP11 modes of a few mode fiber is successfully excited by the few-modes laser. The device is easy to be implemented with low production costs, which provides a new light source choice for few-modes optical communication system. Also this device gives a possibility to realize the integrated emitter in the space division multiplex system.