• Chinese Journal of Quantum Electronics
  • Vol. 29, Issue 5, 597 (2012)
Fei PENG*
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1007-5461. 2012.05.014 Cite this Article
    PENG Fei. Influence of depolarization effect on optical rectification in GaAs quantum well[J]. Chinese Journal of Quantum Electronics, 2012, 29(5): 597 Copy Citation Text show less

    Abstract

    The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F=3×104 V/cm, 4×104 V/cm, 8×104 V/cm, the peak position is ?ω=108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.