• Chinese Journal of Quantum Electronics
  • Vol. 29, Issue 5, 597 (2012)
Fei PENG*
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1007-5461. 2012.05.014 Cite this Article
    PENG Fei. Influence of depolarization effect on optical rectification in GaAs quantum well[J]. Chinese Journal of Quantum Electronics, 2012, 29(5): 597 Copy Citation Text show less

    Abstract

    The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F=3×104 V/cm, 4×104 V/cm, 8×104 V/cm, the peak position is ?ω=108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.
    PENG Fei. Influence of depolarization effect on optical rectification in GaAs quantum well[J]. Chinese Journal of Quantum Electronics, 2012, 29(5): 597
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