EFFECTS SPUTTERING Ar PRESSURE ON THE OPTICAL CONSTANTS OF Si/Ge MULTILAYERS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 22 >Issue 1 >Page 77 > Article

Journal of Infrared and Millimeter Waves
Vol. 22, Issue 1, 77 (2003)

EFFECTS SPUTTERING Ar PRESSURE ON THE OPTICAL CONSTANTS OF Si/Ge MULTILAYERS

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]³, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. EFFECTS SPUTTERING Ar PRESSURE ON THE OPTICAL CONSTANTS OF Si/Ge MULTILAYERS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1): 77 Copy Citation Text

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References

[3] Chen L Y, Lynch D W. Scanning ellipsometer by rotating polarizer and analyzer. Appl. Opt., 1987, 26(24): 5221-5228

[5] Chen Liangyao, Feng Xinwe, Su Yi, et al. Improved rotating analyzer-polarizer type of scanning ellipsometer. Thin Solid Film, 1993, 234: 385-389

[6] Aspros D E. Optical Properties of Solids: New Development. Serphin B O, ed. North-Holland: Amsterdam, 1976: 15

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. EFFECTS SPUTTERING Ar PRESSURE ON THE OPTICAL CONSTANTS OF Si/Ge MULTILAYERS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1): 77

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