STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 2 >Page 140 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 2, 140 (2005)

STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD[J]. Journal of Infrared and Millimeter Waves, 2005, 24(2): 140 Copy Citation Text

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References

[3] Zitter R N. Role of traps in photoelectromagnetic and photoconductive effects [J]. Phys.Rev,1958,12(3):852-855.

[4] Schacham S E, Finkman E. Magnetic field effect on the R0A product of HgCdTe diodes [J]. J.Vac.Sci.Technol. 1989,7(2) :387-390.

[5] Rosbeck J P, Starr RE, Price S L, et al. Background and temperature dependent current-voltage characteristics of Hg1-xCdxTe photodiodes [J]. J.Appl.Phys.1982, 53(9):6430-6440.

[6] Hansen G L, Schmit J L. Calculation of intrinsic carrier concentration in Hg1-xCdxTe [J]. J.Appl.Phys.1983, 54(3):1639-1640.

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