Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

Qi Wang

Journals >Chinese Optics Letters >Volume 5 >Issue 6 >Page 358 > Article

Chinese Optics Letters
Vol. 5, Issue 6, 358 (2007)

Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

Qi Wang^1、2、*

Author Affiliations

¹Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876

²Institute of Continuing Education, Beijing University of Posts and Telecommunications, Beijing 100876

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Qi Wang. Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD[J]. Chinese Optics Letters, 2007, 5(6): 358 Copy Citation Text

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[2] Duan Xiaofeng, Huang Yongqing, Wang Qi, Huang Hui, Ren Xiaomin, Wen Kai. A Wavelength Selective Monolithically Integrated Photodetector Array[J]. Chinese Journal of Lasers, 2009, 36(9): 2362

[3] Zhiqing Lü, Kun Zhao, Hao Liu, Na Zhou, Hui Zhao, Lei Gao, Songqing Zhao, Aijun Wang. Fast lateral photovoltaic effect in ferroelectric LiNbO3 single crystals[J]. Chinese Optics Letters, 2009, 7(8): 08718

[4] Huang Yongqing, Duan Xiaofeng, Wang Wei, Yan Qiang, Di Jing, Ren Xiaomin, Huang Hui, Wang Qi, Zhang Xia. Monolithically Integrated Resonant Cavity-Enhanced Photodetector with Four-Mirror and Three-Cavity for Long Wavelength[J]. Acta Optica Sinica, 2010, 30(s1): 100218

Qi Wang. Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD[J]. Chinese Optics Letters, 2007, 5(6): 358

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