Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

Qi Wang

Journals >Chinese Optics Letters >Volume 5 >Issue 6 >Page 358 > Article

Chinese Optics Letters
Vol. 5, Issue 6, 358 (2007)

Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

Qi Wang^1,2,*

Author Affiliations

¹Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876

²Institute of Continuing Education, Beijing University of Posts and Telecommunications, Beijing 100876

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Qi Wang, "Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD," Chin. Opt. Lett. 5, 358 (2007) Copy Citation Text

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Qi Wang, "Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD," Chin. Opt. Lett. 5, 358 (2007)

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