1Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876
2Institute of Continuing Education, Beijing University of Posts and Telecommunications, Beijing 100876
Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low-temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-micron optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50*50 (microns) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.