High-temperature High-slope-efficiency 1 060 nm Single-mode Semiconductor Laser

LI Ruixiao; LU Xiangmeng; ZHAO Lun; ZHANG Xueyang; LIAO Miaomiao; LUO Qingchun; ZOU Peihong; QIU Gaoshan; ZHANG Jing

doi:10.16818/j.issn1001-5868.2024022103

Journals >Semiconductor Optoelectronics >Volume 44 >Issue 4 >Page 557 > Article

Semiconductor Optoelectronics
Vol. 44, Issue 4, 557 (2024)

High-temperature High-slope-efficiency 1 060 nm Single-mode Semiconductor Laser

LI Ruixiao, LU Xiangmeng, ZHAO Lun, ZHANG Xueyang..., LIAO Miaomiao, LUO Qingchun, ZOU Peihong, QIU Gaoshan and ZHANG Jing|Show fewer author(s)

Author Affiliations

Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN

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DOI: 10.16818/j.issn1001-5868.2024022103 Cite this Article

LI Ruixiao, LU Xiangmeng, ZHAO Lun, ZHANG Xueyang, LIAO Miaomiao, LUO Qingchun, ZOU Peihong, QIU Gaoshan, ZHANG Jing. High-temperature High-slope-efficiency 1 060 nm Single-mode Semiconductor Laser[J]. Semiconductor Optoelectronics, 2024, 44(4): 557 Copy Citation Text

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References

[4] Wang Wei, Zhai Teng, Wang Hao, et al. Distributed feedback semiconductor laser with double-trench ridge waveguide structure[J]. Acta Photonica Sinica, 2017, 46(6): 158-163.

[6] Spiessberger S, Schiemangk M, Wicht A, et al. Narrow linewidth DFB lasers emitting near a wavelength of 1 064 nm[J]. J. Lightwave Technol., 2010, 28(17): 2611-2616.

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