Currently, 1 060 nm semiconductor lasers are widely applied in areas that include space LiDAR and high-energy laser systems. Because of the high stress of InGaAs on a GaAs substrate, 1 060 nm semiconductor lasers usually have a large number of defects. In addition, 1 060 nm semiconductor lasers always have a thin waveguide layer for a large confinement factor. This produces a large cavity loss and non-radiation combination, which leads to poor slope efficiency and high-temperature characteristics. Moreover, the conventional GaAs barrier cannot effectively confine the carriers in the quantum well, which degrades its performance when the operating temperature is high. This study optimized the growth conditions and applied stress-compensated quantum wells to effectively control the stress and barrier height. Enlarging the N cladding thickness also reduced the loss in the cavity. Consequently, we invented a high-performance 1 060 nm semiconductor laser, which had a slope efficiency as high as ever recorded (0.9 W/A) at both room and high temperature. Through the buried DFB grating, it also realized operation in a single longitudinal mode with a high slope efficiency of 0.7 W/A.