[1] Moy J P, Hugon X, Chabbal J et al.. 3000 InGaAs photodiode multiplexed linear array for the spot 4 SWIR channel [C]. SPIE, 1989, 1107: 137～151
[2] Hoogeveen R. W. M., van der A R. J., Goede A. P. H.. Extended wavelength InGaAs infrared (1.0～2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the earth atmosphere[J]. Infrared Physics & Technology, 2001, 42: 1～16
[3] K. L.Jiao, A. J. Soltyka, W. A. Anderson. Hole trap level in Pt-Ti/p-InGaAs/n-InP heterostructures due to rapid thermal processing[J]. Appl. Phys. Lett., 1990, 57(18): 1913～1915
[4] A. Katz, B. E. Weir, S. N. G. Chu. Pt/Ti/n-InP nonalloyed Ohmic contacts formed by rapid thermal processing[J]. J. Appl. Phys., 1990, 67(8): 3872～3875
[5] H. H. Herger. Models for contacts to planar devices[J]. Solid-State Electronics, 1972, 15: 145～158
[6] M. A. George, W. S. Glaunsinger. Electrical spectroscopic and morphological investigation of chrominm diffusion through gold films[J]. Thin Solid Film, 1990, 189: 59～72
[7] A. Munitz, Y. Komem. Structural and resistivity changes in heat-treated chrominm-gold films[J]. Thin Solid Film, 1976, 37: 171～179
