Simulation Model of Mask with Defect and Its Application to Defect Compensation in Extreme-Ultraviolet Lithography

Liu Xiaolei; Wang Xiangzhao; Li Sikun

doi:10.3788/aos201535.0822006

[1] R Peeters, S Lok, E Alphen, et al.. ASML′s NXE platform performance and volume introduction[C]. SPIE, 2013, 8679: 86791F.

[2] R Peeters, S Lok, J Mallman, et al.. EUV lithography: NXE platform performance overview[C]. SPIE, 2014, 9048: 90481J.

[3] V Bakshi. EUV Lithography[M]. Washington SPIE Press, 2009: 187-198.

[4] A O Antohe, P Kearney, M Godwin, et al.. Production of EUV mask blanks with low Killer defects[C]. SPIE, 2014, 9048: 90480H.

[5] A Garetto, R Capelli, F Blumrich, et al.. Defect mitigation considerations for EUV photomasks[J]. J Micro/Nanolith. MEMS MOEMS, 2014, 13(4): 043006.

[6] A Erdmann, P Evanschitzky, T Bret, et al.. Analysis of EUV mask multilayer defect printing characteristics[C]. SPIE, 2012, 8322: 83220E.

[7] C H Clifford. Simulation and Compensation Methods for EUV Lithography Masks with Buried Defects[D]. Berkely: University of California, 2010. 19-20.

[8] Y Deng, B La Fontaine, A R Neureuther. Performance of repaired defects and attPSM in EUV multilayer masks[C]. SPIE, 2002, 4889: 418-425.

[9] Yan Peiyang, Lin Yan, M Kamna, et al.. EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication[C]. SPIE, 2012, 8322: 83220Z.

[10] A Wagner, M Burkhardt, A B Clay, et al.. Mitigation of extreme ultraviolet mask defects by pattern shifting: Method and statistics[J]. J Vac Sci Technol B, 2012, 30(5): 051605.

[11] A A Kagalwalla, P Gupta, D Hur, et al.. Defect-aware reticle floorplanning for EUV masks[C]. SPIE, 2011, 7974: 79740Z.

[12] C H Clifford, T T Chan, A R Neureuther. Compensation methods for buried defects in extreme ultraviolet lithography masks[J]. J Vac Sci Technol B, 2011, 29(1): 011022.

[13] A Erdmann, P Evanschitzky, T Bret, et al.. Modeling strategies for EUV mask multilayer defect dispositioning and repair[C]. SPIE, 2013, 8679: 86790Y.

[14] A A Kagalwalla, P Gupta. Comprehensive defect avoidance framework for mitigating EUV mask defects[C]. SPIE, 2014, 9048: 90480U.

[15] Du Yuelin, Zhang Hongbo, M Wong, et al.. Efficient multi-die placement for blank defect mitigation in EUV lithography[C]. SPIE, 2012, 8322: 832231.

[16] A Elayat, P Thwaite, S Schulze. EUV mask blank defect avoidance solutions assessment[C]. SPIE, 2012, 8522: 85221W.

[17] T Pistor, Y Deng, A Neureuther, Extreme ultraviolet mask defect simulation: low-profile defects[J]. J Vac Sci Technol B, 2000, 18(6): 2926-2929.

[18] P Evanschitzky, A Erdmann. Fast near field simulation of optical and EUV masks using the waveguide method [C]. SPIE, 2007, 6533: 65330Y.

[19] Liu Xiaolei, Li Sikun, Wang Xiangzhao. Simplified model for defective multilayer diffraction spectrum simulation in extreme ultraviolet lithography[J]. Acta Optica Sinica, 2014, 34(9): 0905002.

[20] K Adam, A R Neureuther. Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering[J]. J Micro/Nanolith. MEMS MOEMS, 2002, 1(3): 253-269.

[21] C Sambale, T Schmoeller, A Erdmann, et al.. Rigorous simulation of defective EUV multilayer masks[C]. SPIE, 2003, 5256: 1239-1249.

[22] T Hashimoto, H Yamanashi, M Sugawara, et al.. Lithographic characterization of EUVL mask blank defects[C]. SPIE, 2004, 5374: 740-750.

[23] D G Stearns, P B Mirkarimi, E. Spiller. Localized defects in multilayer coatings[J]. Thin Solid Films, 2004, 446: 37-49.

[24] A O Antohe, D Balachandran, He Long, et al.. SEMATECH produces defect-free EUV mask blanks: Defect yield and immediate challenges[C]. SPIE, 2015, 9422: 94221B.

[25] Cao Yuting, Wang Xiangzhao, Qiu Zicheng, et al.. Simplified model for mask diffraction in extreme-ultraviolet projection lithography [J]. Acta Optica Sinica, 2011, 31(4): 0405001.

[26] Cao Yuting, Wang Xiangzhao, Bu Yang. Fast simulation method for contact hole mask in extreme-ultraviolet lithography[J]. Acta Optica Sinica, 2012, 32(7): 0705001.

[27] C H Clifford, A R Neureuther. Smoothing based model for images of isolated buried EUV multilayer defects[C]. SPIE, 2008, 6921: 692119.

[28] M C Lam, A R Neureuther. Simplified model for absorber feature transmissions on EUV masks[C]. SPIE, 2006, 6349: 63492H.

[29] T Fühner, T Schnattinger, G Ardelean, et al.. Dr.LiTHO – a development and research lithography simulator[C]. SPIE, 2007, 6520: 65203F.

[30] T Schmoeller, T Klimpel, I Kim, et al.. EUV pattern shift compensation strategies[C]. SPIE, 2008, 6921: 69211B.

[31] Hua Song, L Zavyalova, I Su, et al.. Shadowing effect modeling and compensation for EUV lithography[C]. SPIE, 2011,7969: 79691O.

[32] Cao Yuting, Wang Xiangzhao, Bu Yang, et al.. Analysis of mask shadowing effects in extreme-ultraviolet lithography[J]. Acta Optica Sinica, 2012, 32(8): 0805001.

CLP Journals