HgCdTe(MCT)infrared detectors have achieved very rapid development in recent years. With the continuous progress of related technology, the requirements for detectors are getting higher and higher. The surface of the MCT detector is very sensitive to factors such as impurities, defects, damage and temperature. Many performances of the device can be directly determined by the properties of its surface, so the passivation of the surface of the MCT material is regarded as the key process for the preparation of infrared detectors. In order to improve the surface stability of the device, the most commonly used method is to passivate the surface of the MCT material. This article mainly introduces the common passivation methods on the surface of MCT materials, focuses on the common dielectric film passivation methods combined with domestic and foreign literature, and prospects for future work.