Output current of double heterojunction uni-travelling-carrier phototransistor

LIU Shuo; XIE Hong-Yun; SUN Dan; LIU Rui; WU Jia-Hui; ZHANG Wan-Rong

doi:10.11972/j.issn.1001-9014.2017.05.14

[1] Viana C, Tegegne Z G, Rosales M, et al. Hybrid photo-receiver based on SiGe heterojunction photo-transistor for low-cost 60 GHz intermediate-frequency radio-over-fibre applications［J］. Electronics Letters, 2015,51(8):640-642.

[2] LOU Zheng, LIANG Zhong-Zhu, SHEN Guo-Zhen. Photodetectors based on two dimensional materials［J］. Journal of Semiconductors, 2016, 37(9):091001.

[3] ZHANG Shang-Jian, WANG Heng, ZOU Xin-Hai, et al. Self-calibrating measurement of high-speed electro-optic phase modulators based on two-tone modulation［J］, Optics Letters, 2014, 39(12):3504-3507.

[4] Kim J Y, Choi C S, Choi W Y, et al. Characteristics of InP—InGaAs HPT-Based Optically Injection-Locked Self-Oscillating Optoelectronic Mixers and Their Influence on Radio-Over-Fiber System Performance［J］. IEEE Photonics Technology. Letters, 2007, 19(3):155-157.

[5] Park M S, Jang J H. Enhancement of Optical Gain in Floating-Base InGaP—GaAs Heterojunction Phototransistors［J］. IEEE Photonics Technology. Letters, 2010, 22(16):1202-1204.

[6] Ishibashi T, Kodama S, Shimizu N, et al. High-Speed response of uni-traveling-carrier photodiodes［J］. Japanese Journal of Applied Physics, 1997, 36(10):6263-6268.

[7] Wang L, Zhao L, Pan J, et al. A new phototransistor with uni-travelling-carrier and optically gradual coupling properties［J］. Opto-electronics Review,2009, 17(3):242-246.

[8] Kim J, Kanakaraju S, Johnson W B, et al. High upconversion gain optoelectronic mixer using uni-travelling carrier phototransistors［J］. Electronics Letters, 2012, 48(10):583-585.

[10] JIANG Zhi-Yun, XIE Hong-Yun, ZHANG Liang-Hao, et al. Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor［J］. Chinese Physics B, 2015, 24(4):048504.

[12] Srivastava S, Roenker K P. Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode［J］. Solid-State Electronics, 2004, 48(3):461-470.