• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 5, 520 (2003)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Novel Design of L-band EDFA[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 520 Copy Citation Text show less
    References

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    [3] Tanaka S, Imai K, Yazaki T, et al. Ultral-wideband L-band EDFA using phosphorus co-doped silica-fiber [C]//OFC'2002, Th J3, 2002, 458-459

    [4] Li Qian, Davide F, Benjamin S D, et al. Gain-flattened, extended L-band (1570~1620 nm) high power, low noise erbium-doped fiber amplifiers [C]// OFC'2002, Th J4, 2002, 459-461

    [5] Flood, et al. Tech. Digest OAA '99 WD3-1 [C]//1999, 54-57

    [6] Di Muro R. Dependce of L-band amplifier efficiency on pump wavelength and amplifier design [C]// OFC'2000,WG7-2, 2000

    [7] Choi B H, Park H H, Chu M, et al. High-gain coefficient long-wave-band erbium-doped fiber amplifier using 1530 nm band [J]. IEEE Photonics Technology Letters, 2001, 13(2): 109-111

    [8] Yamashita T, Sawada H, Yoshida M, et al. High efficiency amplification of EDFA using a pump wavelength of the 1.53μm region [C]//ECOC'2000, 2000

    [9] Massicott J F, Wyatt R Ainslic B J. Low noise operation of Er3+ doped silica fiber amplifier around 1.6 μm [J].Electronics Letters, 1992, 28(20): 1924-1925

    [10] Yeniay A, Gao Renyuan. L-band EDFA gain and gain flatness enhancement via co-propagating C-band seed technique [C]// ECOC'2001-Amsterdam, Tu.L.3.1, 2001, 224-225

    [11] Yeniay A, Gao Renyuan. Single stage high power L-band EDFA with multiple C-band seeds [C]//OFC'2002, ThJ2,2002, 457-458

    [12] Yamashita S, Nishihara M. L-band erbium-doped fiber amplifier incorporating an inline fiber grating laser [J].IEEE Journal on Selected Topics in Quantum Electronics, 2001, 7(1): 44-48

    [13] Bumki M, Hosung Y, Jae L W, et al. Coupled structure for wide-band EDFA with gain and noise figure improvement from C to L-band ASE injection [J]. IEEE Photonics Technology Letters, 2000, 12(5): 480-482

    [14] Mahdi M A, Ahmad H. Gain enhanced L-band Er3+-doped fiber amplifier utilizing unwanted backward ASE [J].IEEE Photonics Technology Letters, 2001, 13(10): 1067-1069

    [15] Rodolfo D M, Lowe D, Wilson S. Broad-band amplification using a novel amplifier topology [J]. IEEE Photonics Technology Letters, 2001, 13(10): 1073-1075

    [16] Hwang S, Song K W, et al. Broad-band erbium-doped fiber amplifier with double-pass configuration [J]. IEEE Photonics Technology Letters, 2001, 13(12): 1289-1291

    [17] Hwang S, Song K W, Song K U, et al. Comparative high power conversion efficiency of C- plus L-band EDFA [J].Electronics Letters, 2001, 37(25): 1539-1541

    [18] Sugimoto R, Aizawa T, Sakai T, et al. High-power double-band EDFA with simple configuration [C]//ECOC'99,1999, 276-277

    [19] Bolshtyansky M, DeMarco J, Wysocki P. Flat, adjustable hybrid optical amplifier for 1610~1640 nm band [C]//OFC'2002, Th J5, 2002, 461-463

    [20] Flood E A. Comparision of temperature dependence in C-band and L-band EDFAs [J]. Journal of Lightwave Technology, 2001, 19 (4): 527-535

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Novel Design of L-band EDFA[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 520
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