• Photonic Sensors
  • Vol. 8, Issue 1, 70 (2018)
M. P. SARMA1, J. M. KALITA1、2、*, and G. WARY1
Author Affiliations
  • 1Department of Physics, Cotton University, Guwahati, 781001, India
  • 2Department of Physics and Electronics, Rhodes University, P. O. Box 94, Grahamstown 6140, South Africa
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    DOI: 10.1007/s13320-017-0473-6 Cite this Article
    M. P. SARMA, J. M. KALITA, G. WARY. Influence of Annealing on X-Ray Radiation Sensing Properties of TiO2 Thin Film[J]. Photonic Sensors, 2018, 8(1): 70 Copy Citation Text show less

    Abstract

    A recent study shows that the titanium dioxide (TiO2) thin film synthesised by a chemical bath deposition technique is a very useful material for the X-ray radiation sensor. In this work, we reported the influence of annealing on the X-ray radiation detection sensitivity of the TiO2 film. The films were annealed at 333K, 363K, 393K, 473K, and 573K for 1hour. Structural analyses showed that the microstrain and dislocation density decreased whereas the average crystallite size increased with annealing. The band gap of the films also decreased from 3.26eV to 3.10eV after annealing. The I-V characteristics record under the dark condition and under the X-ray irradiation showed that the conductivity increased with annealing. The influence of annealing on the detection sensitivity was negligible if the bias voltage applied across the films was low (within 0.2V . 1.0V). At higher bias voltage (>1.0V), the contribution of electrons excited by X-ray became less significant which affected the detection sensitivity.
    M. P. SARMA, J. M. KALITA, G. WARY. Influence of Annealing on X-Ray Radiation Sensing Properties of TiO2 Thin Film[J]. Photonic Sensors, 2018, 8(1): 70
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