[1] WU Y F, MOORE M,SAXLER A,et al. 40W/mm double fieldplated GaN HEMTs. IEEE 64th Device Research Conference, 2006[C]. Goleta: Cree Inc.,2006:151–152.
[2] VETURY R,WEI Y, GREEN D S, et al. High power, high Efficiency, AlGaN/GaN HEMT technology for wireless base station applications. IEEE MTTS International Microwave Symposium digest, 2005 [C]. Charlotte:[s.n.],2005:487—490.
[3] PALACIOS T, CHAKRABORTY A, RAJAN S, et al. Highpower AlGaN/GaN HEMTs for Kaband applications[J]. IEEE Electron Device Letters,2005,26(11):781—783.
[4] WU Y F , MOORE M,SAXLER A,et al. 8watt GaN HEMTs at millimeterwave frequencies. IEEE International Electron Devices Meeting,2005[C].[s.l.]:[s.n.],2005:583—585.
[5] MICOVIC M, KURDOGHLIAN A, HASHIMOTO P, et al. GaN HFET for Wband power applications. IEEE International Electron Devices Meeting, 2006[C].Malibu:[s.n.],2006:1—3.
[6] JIMENEZ J L,CHOWDHURY U. Xband GaN FET reliability. IEEE 46th International Reliability Physics Symposium,2008[C].Richardson:[s.n.],2008:429—435.
[9] SUN Y,EASTMAN L F. Tradeoffs and challenges of short channel design on millimetrewave power performance of GaN HFETs[J]. Electronics Letters.2005,41(15).
[12] INOUE Takashi, ANDO Yuji, MIYAMOTO Hironobu, et al. 30GHzband over 5W power performance of shortchannel AlGaN/GaN heterojunction FETs[J]. IEEE Transactions on Microwave Theory and Technique,2005,53(1):74—80.